The unexpected magnetism in 2D group-IV-doped GaN for spintronic applications
نویسندگان
چکیده
In this study, we systematically investigated the structural and magnetic properties of group-IV-doped monolayer GaN by first-principles calculations. Among group-IV element, only Ge Sn atoms with large atomic radii can form a buckling substituted doping structure an in-plane moment 1 μB per dopant. The compressive strains enhance anisotropy, while tensile tend to destroy dopants. Both stay on same side anti-ferromagnetic semiconductors due diffusion barrier for crossing GaN. intrinsic Ga or N vacancies will eliminate moments dopants charge transferring from vacancies. N-rich growth conditions plentiful supply fill help maintain
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ژورنال
عنوان ژورنال: Physica B-condensed Matter
سال: 2023
ISSN: ['1873-2135', '0921-4526']
DOI: https://doi.org/10.1016/j.physb.2023.415087